Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

p-doped 4H-SiC substrates were implanted with Fe-57 ions at energies ranging from 30 to 160keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100nm-thick region in the semiconducting SiC material. Using Fe-57 Conversion Electron Mossbauer Spectrometry and Superconducting Quantum Interference Device magnetometry, we give evidence that the ferromagnetism obtained in SiC implanted with a Fe-57 atoms concentration close to 2% is not only due to the formation of some Fe-Si magnetic nanoparticles but also originates from magnetic Fe atoms diluted in the matrix of the semiconductor. So, values of Fe atoms magnetizations contained in nanoparticles and Fe atoms diluted in the matrix and the Curie temperatures associated with the nanoparticles and to the matrix have been determined.