Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microscopy, the localization and nature of donor defects formed during implantation were determined. It has been shown that such defects are dislocation loops and quasi-point defects that trap interstitial mercury atoms released during implantation.