DGaO Proceeding

Photodetectors have become an indispensable part of a multitude of technological applications. Silicon photodetectors in particular, which cover a detection range down to wavelengths of approx. 1 μm, have benefited enormously from the constantly advancing development in semiconductor technology. Photodetectors in the infrared range (IR) for wavelengths > 1 μm were only able to keep up with this trend to a limited extent. There are two reasons for this. The materials used are expensive to manufacture and process. In addition, such detectors consist of several chips, i.e. at least a detector chip and a readout chip, which necessitates a complex connection, for example by flip-chip bonding or wire bonding. At the same time, there is an enormous interest in applications such as automotive/LiDAR, food technology, recycling, quality control or hyperspectral observation.