EUVリソグラフィ用メタルオキサイドフォトレジストの開発 Metal Oxide Photoresists Development for EUV Lithography 笠原 一樹*

EUV(extreme ultraviolet)lithography is the most promising candidate for continuation of Moore’s law. But the complexity of the scanner source technology and the need to realize high enough power for throughput concerns, has delayed EUV lithography implementation . Regarding photoresists, CAR(chemically amplified resist)is already capable of achieving sub-13 nm half pitch resolution in a single exposure . However, entirely new resist platforms are strongly required to simultaneously satisfy resolution, sensitivity and LWR(line width roughness)requirements of smaller technology nodes. Recently, several organizations have focused on new EUV organic and inorganic photoresist platform development 3)〜 . And, a metal oxide photoresist system which comprises an inorganic core and an organic ligand has been developed at Cornell University 7), . These metal oxide photoresists show promising lithographic performance using DUV(deep ultraviolet), e-beam and EUV exposure. Several advantages of using this system EUVリソグラフィ用メタルオキサイドフォトレジストの開発