Study of High Precision IGBT Macro-Model Considering Temperature Dependency

Abstract—In this study, a novel SPICE model of an InsulatedGate-Bipolar-Transistor of (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modifications. This paper reports the results of drain current characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE.