Modeling and Analysis of a Broadband Schottky Diode Noise Source Up to 325 GHz Based on 55-Nm SiGe BiCMOS Technology
IEEE transactions on microwave theory and techniques（2020）
Key words
Schottky diodes,Impedance,Electrical resistance measurement,Silicon,Noise measurement,Impedance measurement,Size measurement,BiCMOS,electrical model,excess noise ratio (ENR) extraction,in situ noise source,millimeter-wave (mmW) range
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined