Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride
Semiconductors(2020)
摘要
Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625°C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
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关键词
graphite-like carbon nitride,g-C3N4,structure,photoluminescence
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