Pulsed Characteristics for High Current, Large Area GaN/Ain Resonant Tunneling Diodes.
DRC（2019）
关键词
spontaneous charge,piezoelectric charge,III-nitrides,GaN-based resonant tunnel diodes,highly unusual energy band diagrams,freestanding GaN substrates,threading dislocation density,high peak current densities,repeatable room temperature negative differential resistance,temperature 293.0 K to 298.0 K,GaN-AlN
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