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A Study of the Ultra-Short T-shaped Gate Profile Controlled by the Sensitivity Difference in Bilayer Resists

Yuying Xie,Mingsai Zhu,Jianan Deng,Yifang Chen

MICROELECTRONIC ENGINEERING（2020）

Cited 3|Views13
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Key words
T-shaped profile,Sensitivity difference,Minimum foot width,High electron mobility transistor
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