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Graphene/hBN vertical transistor : tuning a tunneling barrier height by modulating fermi energy level of graphene

Jun-Ho Lee,Dong Hoon Shin,Heejun Yang,Nae Bong Jeong,Do-Hyun Park,Kenji Watanabe,Takashi Taniguchi,Sang Wook Lee,Sung-Ho Jhang,Bae Ho Park,Young Kuk,Hyun-Jong Chung

Bulletin of the American Physical Society（2020）

引用 23|浏览38
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关键词
tunneling barrier height,graphene/hbn vertical transistor,fermi energy level
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