Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes

A new method is proposed to enable high-throughput and high-resolution electrical atomic force microscopy in nanoelectronics. Using a reversed pathway of operation, our technique yields a shorter time-to-data (<; 10x), enhanced dataset statistics and nm-precise resolution; as herein demonstrated for two- and three-dimensional carrier profiling in fin structures of advanced nodes.