DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects
IEICE technical report. Electron devices（2012）
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要