Strain-mediated Symmetry Breaking Switch with Perpendicular Magnetic Anisotropy

Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promisingmethod for controlling magnetization in several applications like magnetictunnel junction and magnetic memory. However, incoherence happens during theswitch process and lower the switch frequency of the magnetic bits. Symmetrybroking can help solve this problem. Here, we present a field-free method forthe symmetry broking and then increase the switch speed of the magnetization. Astrain-mediated method with geometric asymmetry is presented here. In thiswork, we build a finite element model that consists a 50 nanometer diameternanodisk with a varied thickness on the top of a 50 nanometer thick PZT(Pby[ZrxTi1-x]O3) thin film. The results show a 66PMA switching (0.85 nanosecond to 0.29 nanosecond) under same energyconsumption. Finally, we explore the mechanism of the symmetry broking ofvarying thickness nanodot with calculating the energy profile.