Study of ion bombardment of SiC ceramics: surface and interfacial reaction modification

•Surface modification of SiC ceramics induced by Ar ion bombardment was investigated.•An amorphous layer was formed at SiC surface after ion bombardment for fluence of 1 × 1017ions/cm2 at 50 keV.•Beneath the amorphous layer, high-density dislocations and twin crystals were formed by ion bombardment.•Ion bombardment improved bonding quality of ceramics/filler interface effectively, and no reactant stratification occurred.•The shear strength of SiC brazed joints was improved with Ar ion bombardment.