谷歌浏览器插件
订阅小程序
在清言上使用
VIPCreated with Sketch.

Gate Reflectometry For Probing Charge And Spin States In Linear Si Mos Split-Gate Arrays

Hutin L.,Bertrand B.,Chanrion E.,Bohuslavskyi H.,Ansaloni F., Yang T. -Y.,Michniewicz J.,Niegemann D. J.,Spence C.,Lundberg T.,Chatterjee A.,Crippa A.,Li J.,Maurand R.,Jehl X.,Sanquer M.,Gonzalez-Zalba M. F.,Kuemmeth F.,Niquet Y. -M.,De Franceschi S.,Urdampilleta M.,Meunier T.,Vinet M.

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2019）

引用 14|浏览101
关键词
nearest neighbor coupling,coupled electrometer,single-shot precision,spin-dependent quantum capacitance,high-fidelity single-shot readout,multiple split-gate devices,SOI mesa,quantum dots,gate reflectometry-based readout schemes,foundry-compatible MOS spin qubits,linear MOS split-gate arrays,spin-dependent charge movements
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要