Gate Reflectometry For Probing Charge And Spin States In Linear Si Mos Split-Gate Arrays

We fabricated linear arrangements of multiple split-gate devices along an SOT mesa, thus forming a 2 x N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry compatible Si MOS spin qubits.