A 120-Ke− Full-Well Capacity 160-Μv/e− Conversion Gain 2.8-Μm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor
Italian National Conference on Sensors（2019）
关键词
CMOS image sensor,lateral overflow integration capacitor,wide dynamic range,high sensitivity,high full-well capacity,single exposure,backside illumination
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