Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors
international conference on group iv photonics(2019)
摘要
High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an operating temperature of 125K. This was achieved using a novel planar geometry which allowed us to achieve an NEPs of 3×10
-16
WHz
-1/2
and reduced afterpulsing when compared to InGaAs/InP based SPADs operated in nominally identical conditions.
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关键词
short-wave infrared region,afterpulsing reduction,planar geometry,Geiger mode germanium-on-silicon single-photon avalanche diode detectors,germanium-on-silicon material system,single photon detection efficiencies,high sensitivity optical detection,temperature 125.0 K,wavelength 1310.0 nm,InGaAs-InP,Ge-Si
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