High Performance Strained Germanium Gate All Around P-Channel Devices with Excellent Electrostatic Control for Sub-Jtlnm LG
2019 Symposium on VLSI Technology（2019）
关键词
p-type double stacked Ge Gate-AlI-Around devices,p-channel devices,electrostatic control,strained germanium Gate all around p-channel devices,spacer scaling,source/drain material,size 25.0 nm,GeSn
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