Doping Effects of Various Carrier Suppressing Elements on Solution-Processed SnOx-Based Thin-Film Transistors

We have studied indium-free, solution-processed thin-film transistors (TFTs) based on tin-based oxide (SnOx) semiconductors with various dopants. The dopants include aluminum (Al), zirconium (Zr), and yttrium (Y) for their electron-suppressing properties and elemental abundance. A series of doping ratio has been studied and the doped devices exhibit improved switching characteristics as compared with pure SnOx-based TFTs. A SnOx-based TFT having a Zr-to-Sn ratio of 6.67% shows high performance with saturation mobility of 3.1 cm(2)/Vs, a turn on voltage of -5.4 V, and an ON-OFF current ratio of 4.9 x 10(6). X-ray photoelectronic spectroscopy studies were used to confirm that Zr can suppress oxygen vacancies effectively and significantly reduce carrier concentration. Furthermore, low-voltage SnZrO TFTs based on a solution-processed ZrO2 dielectric layer were fabricated and performed at high saturation mobility of 10.9 cm(2)/Vs. This research may provide new valuable insights for improving SnOx-based TFT performance.