Improving Electrical Performance of Few-Layer MoS₂ FETs via Microwave Annealing

A few-layer molybdenum disulfide (MoS ₂ ) has attracted great attention because of its novel electrical and optoelectrical properties for devices. In this letter, we perform a systematic study on the evolution of the electrical performance of the few-layer MoS ₂ field-effect transistors (FETs) under microwave annealing. As a result, obvious improvements on electrical properties are achieved for the sample annealed in N ₂ ambience between 420 and 840 W. The on/off current ratio of ${\sim } {8.34}\times {10}^{ {8}}$ and the hysteresis of 2.1 V, which are ~150 times higher and ~2.1 times smaller compared with that of fabricated MoS ₂ FET, respectively. The proposed technique provides a new method to approach high-performance few-layer MoS ₂ FETs with minimized parasitic resistances.