An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Guan-Fu Chen,Hong-Chih Chen,Ting-Chang Chang,Shin-Ping Huang,Hua-Mao Chen,Po-Yung Liao,Jian-Jie Chen,Chuan-Wei Kuo,Wei-Chih Lai,Ann-Kuo Chu,Sung-Chun Lin,Cheng-Yen Yeh,Chia-Sen Chang,Cheng-Ming Tsai,Ming-Chang Yu,Shengdong Zhang

IEEE Transactions on Electron Devices（2019）

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摘要

This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID-VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → on-state and the ON-state → OFF-state) are performed, and the ph...

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关键词

Logic gates,Voltage measurement,Charge carrier processes,Performance evaluation,Thickness measurement,Semiconductor device measurement,Thin film transistors

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