Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×10 9 cm.Hz 1/2 W −1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge 0.89 Sn 0.11 photoconductor at 77 K. © 2019 The Author(s)