A 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

Korkut Kaan Tokgoz,Ibrahim Abdo,Takuya Fujimura,Jian Pang,Yoichi Kawano,Taisuke Iwai,Akifumi Kasamatsu,Issei Watanabe,Kenichi Okada

IEEE Microwave and Wireless Components Letters（2019）

引用 26|浏览22

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摘要

This letter presents a world-first 300-GHz amplifier in 65-nm standard bulk CMOS (1P9M GP). The amplifier has gain from 273 to 301 GHz, and the peak gain is 21 dB at 298 GHz. The amplifier has 16-stage positive-feedback commonsource topology. The power consumption is 35.4 mW from a 1.2-V supply. Transistor (1 μm × 8 μm) layout is optimized for minimizing gate and channel resistance to increase gai...

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关键词

Layout,Logic gates,Transistors,Resistance,Metals,Capacitors,Gain

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