Current-voltage and Flicker Noise Analysis and Unified Modeling for Amorphous Indium-Gallium-zinc-oxide Thin Film Transistors with Etch Stop Layer from 298 to 333 K

Journal of applied physics(2019)

引用 6|浏览18
暂无评分
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要