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InAs/GaAs Quantum Dot Solar Cells with QDs in the Base Region

IET Optoelectronics(2019)

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摘要
In this work, the influence of quantum dot (QD) position on the performance of solar cells was studied. The presence of QDs within the base regions leads to improved open circuit voltage (Voc) from 0.73 to 0.90 V. Despite a slight reduction in short-circuit current (Jsc) due to carrier collection loss, the enhancement of the Voc of QDSCs with QDs in base region is significant enough to ensure that...
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关键词
gallium arsenide,III-V semiconductors,indium compounds,semiconductor quantum dots,short-circuit currents,solar cells
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