Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling
2018 IEEE International Electron Devices Meeting (IEDM)（2018）
关键词
magnetostrictive effects,STT-MRAM performance,spin modeling,mechanical properties,magnetic tunnel junction,magnetic nucleation process,atomistic modeling,spin-transfer-torque magnetic random access memories,STT-MRAM devices,compressive strain,tunnel magnetoresistance,MgO
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