Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications Embedding 16MB Phase Change Memory

F. Arnaud,P. Zuliani,J. P. Reynard,A. Gandolfo,F. Disegni,P. Mattavelli,E. Gomiero,G. Samanni,C. Jahan,R. Berthelon,O. Weber,E. Richard,V. Barral,A. Villaret,S. Kohler,J. C. Grenier,R. Ranica,C. Gallon,A. Souhaite,D. Ristoiu,L. Favennec,V. Caubet,S. Delmedico,N. Cherault,R. Beneyton,S. Chouteau,P. O. Sassoulas, A. Vernhet,Y. Le Friec,F. Domengie,L. Scotti, D. Pacelli,J. L. Ogier, F. Boucard,S. Lagrasta,D. Benoit,L. Clement,P. Boivin,P. Ferreira,R. Annunziata,P. Cappelletti

International Electron Devices Meeting（2018）

Cited 72|Views52
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Abstract
For the first time we propose a 28nm FDSOI e-NVM solution for automotive micro-controller applications using a Phase Change Memory (PCM) based on chalcogenide ternary material. A complete array organization is described exploiting body biasing capability of Fully Depleted Silicon On Insulator (FDSOI) transistors. Leveraging triple gate oxide integration with high-k metal gate (HKMG) stack, a true 5V transistor with high analog performance has been demonstrated. Reliable PCM 0,036um2 analytical cell with 2 decades programming window after 1 Million of cycles has been demonstrated. Finally, current distributions based on a fully integrated 16MB macro-cell is presented achieving Bit Error Rate (BER) < 10−8 after multiple bakes at 150°C and 10k cycling of code storage memory.
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Key words
automotive microcontroller applications,chalcogenide ternary material,body biasing capability,triple gate oxide integration,high-k metal gate stack,code storage memory,phase change memory,fully depleted silicon on insulator,FDSOI transistors,fully integrated macrocell,FDSOI e-NVM solution,HKMG stack,bit error rate,BER,current distributions,temperature 150.0 degC,size 28.0 nm,voltage 5.0 V
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