Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications Embedding 16MB Phase Change Memory

For the first time we propose a 28nm FDSOI e-NVM solution for automotive micro-controller applications using a Phase Change Memory (PCM) based on chalcogenide ternary material. A complete array organization is described exploiting body biasing capability of Fully Depleted Silicon On Insulator (FDSOI) transistors. Leveraging triple gate oxide integration with high-k metal gate (HKMG) stack, a true 5V transistor with high analog performance has been demonstrated. Reliable PCM 0,036um2 analytical cell with 2 decades programming window after 1 Million of cycles has been demonstrated. Finally, current distributions based on a fully integrated 16MB macro-cell is presented achieving Bit Error Rate (BER) < 10−8 after multiple bakes at 150°C and 10k cycling of code storage memory.