First Demonstration of Monocrystalline Silicon Macaroni Channel for 3-D NAND Memory Devices
2018 IEEE Symposium on VLSI Technology（2018）
Key words
channel replacement fabrication process,highly controllable channel replacement process sequence,3D NAND memory devices,polycrystalline macaroni silicon channel,epi-based monocrystalline silicon macaroni channel 3D NAND devices,electron mobility,off state leakage reduction,reliability,Si
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