All-Semiconductor Coupled-Cavity Vcsels For Narrow Linewidth

Darwin K. Serkland,Theodore J. Morin,Alejandro J. Grine,Gregory M. Peake,Wesley Y. Kendall,Michael G. Wood,Christopher P. Hains,Haley M. So,Amy L. Soudachanh,Kent M. Geib

2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)（2018）

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Abstract

We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant A1GaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.

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Key words

VCSEL, Coupled Cavities, Linewidth, Frequency Noise, Single-Frequency Laser, Tunable Laser, Mode Selection, Atomic Clocks, Spectroscopy

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