Demonstration Of High Mobility And Quantum Transport In Modulation-Doped Beta-(Alxga1-X)(2)O-3/Ga2o3 Heterostructures

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the beta-(AlxGa1-x)(2)O-3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped beta-(AlxGa1-x)(2)O-3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm(2)/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (beta-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 +/- 0.015 m(0) and the quantum scattering time to be 0.33 ps at 3.5K. The demonstrated modulation-doped beta-(AlxGa1-x)(2)O-3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the beta-Ga2O3 material system. Published by AIP Publishing.