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A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel

T. Rakshit,B. Obradovic,W. -E. Wang, W. -H. Kim, K. -M. Shin,S. -C. Baek,S. -W. Lee, S. -H. Kim,J. -M. Lee,D. Kim, A. Hoover,W. -B. Song,M. Cantoro,Y. -C. Heo, R. Rooyackers, S. C. Ardila,A. Vais,D. Lin,N. Collaert,M. S. Rodder

IEEE electron device letters（2017）

引用 3|浏览54
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关键词
In0.35Ga0.65As,high voltage,mobile CPU,leakage,parasitic bipolar effect,performance
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