Passivating Contacts for Silicon Solar Cells with 800 °C Stability Based on Tunnel-Oxide and Highly Crystalline Thin Silicon Layer
Photovoltaic Specialists Conference（2016）
关键词
contact passivation,silicon solar cells,tunnel-oxide,nanostructured highly crystalline thin silicon layers,electron selective contact optimization,surface passivation,p-type wafers,n-type wafers,open-circuit voltage,thermal annealing,hole-selective contacts,temperature 800 degC,voltage 718 mV,temperature 800 degC to 924 degC,voltage 723 mV,Si
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