Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method

H.-J. Rost,R. Menzel, D. Siche, U. Juda, S. Kayser,F.M. Kießling,L. Sylla,T. Richter

Journal of Crystal Growth（2018）

Cited 6|Views17

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Abstract

•A new crucible free method to grow low dislocation density, single crystalline Si crystals without cone is proposed.•It is characterized by growth on large diameter seeds without using the Dash-technique.•A combination of RF- and MF heated susceptor (side heater) reduces the thermal stresses.•Single crystalline growth could be preserved for a length up to 90 mm.

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Key words

A1. Defects,A2. Bulk crystal growth,A2. Floating zone technique,A2. Single crystal growth,B2. Semiconducting silicon

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