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Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors with Compact Modeling

IEEE transactions on electron devices/IEEE transactions on electron devices(2018)

引用 7|浏览8
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关键词
Atomic layer deposition (ALD),compact modeling,contact resistance,device physics,drain-offset transistors,thin-film transistors (TFTs),zinc oxide (ZnO)
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