Breakthrough of Selector Technology for Cross-Point 25-Nm ReRAM

Soo Gil Kim,Jong Chul Lee,Tae Jung Ha,Jong Ho Lee,Jae Yeon Lee,Yong Taek Park,Kyung Wan Kim,Won Ki Ju,Young Seok Ko, Hyun Mi Hwang,Bo Mi Lee,Joo Young Moon,Woo Young Park,Byung Gu Gyun,Byoung-Ki Lee,Donggyu Yim,Sung-Joo Hong

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

引用 18|浏览28

关键词

selector technology,innovative oxide selector,doping method,cross-point 25-nm ReRAM,selector-one resistor,Resistance switching Random Access Memory,threshold switching behavior,off-current threshold voltage,oxide films,metal atoms,matrix oxide material,semiconductor industry,SiO2

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