Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si$_{\mathrm{0.8}}$Ge$_{\mathrm{0.2}}$ quantum well hetero-structure.
Bulletin of the American Physical Society（2017）
关键词
triple quantum dot device,undoped si/si$_{\mathrm{08}}$ge$_{\mathrm{02}}$,enhancement-mode,two-channel,hetero-structure
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