27.5 Kv 4h-Sic Pin Diode With Space-Modulated Jte And Carrier Injection Control
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)(2018)
摘要
Ultra-high-voltage 4H-SiC PiN diode with a space modulated junction termination extension and carrier injection control has been investigated. The introduction of a space modulated region results in a high breakdown voltage of 27.5 kV, that is the highest among the values reported for 20 A class 4H-SiC PiN diodes. The simulated and measured forward characteristics of the 4H-SiC PiN diode with the carrier injection control are also reported. Forward voltage and on-resistance decrease as carrier lifetime increases. The introduction of carrier injection control at the anode and cathode sides results in reduction in carrier concentration. The measured characteristics exhibit good correlation with simulated results. Based on these results, we can confirm the effect of carrier lifetime on electrical characteristics.
更多查看译文
关键词
SiC,Ultra High Voltage,PIN Diode,space-modulated JTE,Carrier Lifetime Control,Carrier Injection Control
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要