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Direct Detection of DNA using Electrical Double Layer gated High Electron Mobility Transistor in High Ionic Strength Solution with High Sensitivity and Specificity

Sensors and Actuators B: Chemical(2018)

引用 18|浏览21
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摘要
•Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct testing in physiological salt concentration.•Very low detection limit of 1 fM target DNA.•Selectivity elucidated for 6-,2-,1-base mismatch DNA.•Potential candidate for rapid DNA sensing in point of care diagnostics.
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关键词
AlGaN/GaN HEMT,Electrical double layer,Sensitivity and specificity of DNA detection
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