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Tri-state Resistive Switching Characteristics of MnO/Ta2O5 Resistive Random Access Memory Device by a Controllable Reset Process

N. J. Lee, T. S. Kang,Q. Hu,T. S. Lee,T-S Yoon,H. H. Lee,E. J. Yoo,Y. J. Choi,C. J. Kang

Journal of physics D, Applied physics（2018）

引用 4|浏览5
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关键词
tri-state resistive switching,tantalum oxide,manganese oxide,RRAM
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