High Sensitivity Vanadium–vanadium Pentoxide–aluminium Metal–insulator–metal Diode

This work reports on the fabrication of an improved sensitivity metal-insulator-metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V-V2O5-Al) thin film layers. The MIM diode is fabricated using electron-beam lithography, sputter deposition and metal liftoff techniques. X-ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V2O5 insulating thin film. Electrical characterisation of the fabricated V-V2O5-Al shows a clear high sensitivity at -316 mV that reaches -8.52 V-1 with a dynamic resistance of 5.024 k Omega.