Monolithic Optical Transceivers In 65 Nm Bulk Cmos
2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)(2018)
摘要
We present the integration of optical passive and active components next to millions of nanoscale bulk silicon transistors through a single deposited layer of polysilicon on silicon oxide islands. We demonstrate 10 Gb/s monolithic O-band optical transceivers on this platform.
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关键词
optical passive components,active components,nanoscale bulk silicon transistors,silicon oxide islands,monolithic O-band optical transceivers,monolithic optical transceivers,bulk CMOS,single deposited layer,size 65.0 nm,bit rate 10 Gbit/s,SiO
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