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Morphology of GaAs Crystals Heterogeneously Integrated on Nominal (001) Si by Epitaxial Lateral Overgrowth on Tunnel Oxide Via Ge Nano-Seeding

Thin Solid Films(2018)

Cited 2|Views12
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Key words
Characterization,Defects,Nucleation,Chemical beam epitaxy,Selective epitaxy,Gallium arsenide,Silicon
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