Impact of Forming Compliance Current on Storage Window Induced by a Gadolinium Electrode in Oxide-Based Resistive Random Access Memory

Enlargement of memory window through forming compliance current was demonstrated in Gd:SiO2 resistive random access memory (RRAM) with a gadolinium (Gd) electrode. Lower forming compliance current for Gd:SiO2 RRAM with a Gd electrode results in larger memory window as compared with the RRAM with a Pt electrode. Through analyses on the current conduction mechanism, we demonstrate that a lower formi...