Single-Event Latch-Up: Increased Sensitivity from Planar to FinFET

Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during 64-MeV proton beam accelerated testing and confirmed with neutron beam experiments. TCAD simulations demonstrate that the 3x shallower trench isolation in FinFET technology significantly increases both beta(npn) center dot beta pnp-product gain of parasitic CMOS SCR and SEL sensitivity. It is expected that other FinFET technologies with similar shallower trench isolation parameters will also experience increased SEL sensitivity.