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Spin Transfer Torque Driven Dynamics of the Synthetic Antiferromagnetic Reference Layer of Perpendicular MRAM Devices

L. Thomas,M. Benzaouia,S. Serrano-Guisan,G. Jan,S. Le,Y. Lee,H. Liu,J. Zhu,J. Iwata-Harms,R. Tong,Y. Yang,V. Sundar,S. Patel,J. Haq,D. Shen,R. He,V. Lam,J. Teng, P. Liu,A. Wang,T. Zhong,T. Torng,P. Wang

2017 IEEE International Magnetics Conference (INTERMAG)（2017）

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Key words
spin transfer torque driven dynamics,synthetic antiferromagnetic reference layer,perpendicular MRAM devices,spin transfer torque magnetic random access memories,perpendicularly magnetized STT-MRAM devices,3-layer macrospin model,phase diagram,time-resolved resistance measurements,magnetic tunnel junctions,ferromagnetic electrodes,tunnel barrier,MgO
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