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Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

S-A. Chew,H.Y. Yu,Marc Schaekers,Steven Demuynck,Geert Mannaert,Eddy Kunnen,Erik Rosseel,Andriy Hikavyy,A. Dangol,K. De Meyer,D. Mocuta,Naoto Horiguchi,G. Leusink,C. Wajda,T. Hakamata, T. Hasegawa,K. Tapily,R. Clark

2017 IEEE International Interconnect Technology Conference (IITC)（2017）

Cited 19|Views90
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Key words
ALD Ti,Wrap Around Contact,FinFET,Contact Resistivity
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