Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)
2017 17th International Workshop on Junction Technology (IWJT)（2017）
Key words
conformal SDE doping,FinFET,arsenic-doped sol-gel coating,SGC,flash lamp annealing,FLA,ultra-shallow n-p junctions,silicon,Tokyo Ohka Kogyo Co., Ltd,arsenic dopant concentration,junction profile,source-drain extensions,3D device engineering,size 10 nm,Si:As
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