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On the Distribution of the FET Threshold Voltage Shifts Due to Individual Charged Gate Oxide Defects

B. Kaczer,S. M. Amoroso,R. Hussin,A. Asenov,J. Franco,P. Weckx,Ph. J. Roussel,G. Rzepa,T. Grasser, N. Horiguchil

International Integrated Reliability Workshop（2016）

引用 8|浏览32
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关键词
Reliability,Trap impact,Variability,Distributions
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