Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1′R,3S,5′S)-spiro[furan-3(2H),6′-[3]oxabicyclo[3.2.1]octane]-2,2′,4′,5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4′-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 10 4 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation.