Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz

Marina Deng,Thomas Quemerais,Simon Bouvot,Daniel Gloria,Pascal Chevalier,Sylvie Lepilliet,F. Danneville,Gilles Dambrine

Solid-State Electronics（2017）

引用 16|浏览35

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摘要

•The SiGe HBT S-parameters from 250MHz to 325GHz are presented for the first time.•Standard calibration and de-embedding techniques remained valid up to 325GHz.•A small-signal model was compared with measurements up to 325GHz.

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关键词

Device characterization,G-band,H-band,Heterojunction bipolar transistors (HBTs),Silicon-Germanium (SiGe)

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